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ST 2SC2310
NPN Silicon Epitaxial Planar Transistor low frequency ,low noise amplifier . The transistor is subdivided into two groups B and C according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.
TO-92 Plastic Package Weight approx. 0.19g
Absolute Maximum Ratings (Ta=25 OC) Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Emitter Current Power Dissipation Junction Temperature Storage Temperature Range VCBO VCEO VEBO IC -IE Ptot Tj TS Value 55 50 5 100 100 200 150 -55 to +150 Unit V V V mA mA mW
O O
C C
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
(R)
Dated : 07/12/2002
ST 2SC2310
Characteristics at Tamb=25 OC Symbol DC Current Gain at VCE=12V, IC=2mA Current Gain Group B C Collector Cutoff Current at VCB=18V Emitter Cutoff Current at VEB=2V Collector Emitter Saturation Voltage at IC=10mA, IB=1mA Transition Frequency at VCE=12V, IC=2mA Base Emitter Voltage at IC=2mA, VCE=12V Collector Output Capacitance at VCB=10V, f=1MHz Collector Base Breakdown Voltage at IC=10A Collector Emitter Breakdown Voltage at IC=1mA Emitter Base Breakdown Voltage at IC=10A Noise Figure at VCE=6V, IC=0.1mA, f=120Hz, Rg=500 Small Signal Input Impedance at VCE=5V, IC=0.1mA,f=270Hz Small Signal Feedback Ratio at VCE=5V, IC=0.1mA,f=270Hz Small Signal Current Transfer Ratio at VCE=5V, IC=0.1mA,f=270Hz Small Signal Output Admittance at VCE=5V, IC=0.1mA,f=270Hz hoe 11 S hfe 130 hre 70 X10
-6
Min.
Typ.
Max.
Unit
hFE hFE
100 160
-
200 320
-
ICBO
-
-
0.5
A
IEBO
-
-
0.5
A
VCE(sat)
-
-
0.2
V
fT
-
230
-
MHz
VBE
-
0.67
0.75
V
Cob
-
1.8
3.5
pF
VCBO
55
-
-
V
VCEO
50
-
-
V
VEBO
5
-
-
V
NF hie
-
3 16.5
5 -
dB k
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
(R)
Dated : 07/12/2002
ST 2SC2310
Collector Power Dissipation Pc (mW)
Maximum Collector Dissipation Curve 300
Collector Current Ic (mA)
Typical Output Characteristics
Pc
10 8 6
60
=2 00 W m
50
200
40 30 4 2 20 10 A I B=0 0 5 10 15 20 25 Collector to Emitter Voltage VCE (V) DC Current Transfer Ratio vs. Collector Current 300 VCE=12V
Ta=7
o 5C
100
0
50
100
150
Ambient Temperature Ta(o C)
Typical Transfer Characteristics 5
Collector Current Ic (mA) DC Current Transfer Ratio h FE
4 3 2 1
VCE=12V
200
25
100
0
0.2
0.4
0.6
0.8
1.0
0 0.03
0.1
0.3
1.0
3
10
30
Base to Emitter Voltage VBE (V)
Collector Current Ic (mA)
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
(R)
Dated : 07/12/2002
ST 2SC2310
Small Signal Current Transfer Ratio hfe
Base to Emitter Voltage VBE (V)
Small Signal Current Transfer Ratio vs. Collector Current 300 f=270 Hz VCE=12V 200
Base to Emitter Voltage vs. Ambient Temperature 0.9 0.8 0.7 0.6 0.5 0.4 -20 0 20 40 60 80 Ambient Temperature Ta(o C) Emitter Input Capacitance vs. Emitter to Base Voltage 5 4 3 2 1 I C=0 f=1MHz VCE=12V I C=2mA
100
0 0.03 0.1 0.3 1.0 3 10 30
Collector Current Ic (mA)
Emitter Input Capacitance Cib (pF)
Collector Output Capacitance Cob (pF)
Collector Output Capacitance vs. Collector to Base Voltage 5 4 3 2 1 I E=0 f=1MHz
0
4
8
12
16
20
0
2
4
6
8
10
Collector to Base Voltage VCB (V)
Emitter to Base Voltage VEB (V)
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
(R)
Dated : 07/12/2002

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